Energy Efficient 5G & IOT Radio Interface Architecture enabled by Silicon Technologies
Date: Wednesday October 2
Time: 11:00 – 18:30
Room: Conference Room 1
A key aspect of 5G is to enable an energy efficient network while providing ~10Gb/s data rate for enhanced mobile broadband usage. The energy efficiency is even more important for IOT which is another key usage scenario for 5G. This topical area session will highlight the current status and progress in research on differentiated silicon technologies to enable an energy efficient 5G and IOT radio front end and transceiver. Several eminent speakers from both academics and industry will talk about different aspects of 5G sub 6GHz including IOT & mmWave radio interface architectures. Key components that influence the overall energy consumption within a 5G & IOT radio front end and transceiver will be explained. The workshop will then focus on how differentiated silicon technologies like partially and fully depleted silicon-on-insulator (PD & FDSOI), FinFET and Silicon-Germanium (SiGe) Bipolar-CMOS (BICMOS) will enable those key components within 5G & IOT radio FEM & Transceiver energy efficient.
Topical Area: 5G Technology
Moderator: Dr. Anirban Bandyopadhyay, Director RF Business Development, GLOBALFOUNDRIES, USA.
Peter Baumgartner is an Intel Principal Engineer for RF and Analog devices. He received the Dipl.-Phys. degree from the Technical University of Munich, Germany in 1993 and the Dr. rer. nat. degree in physics from the Walter Schottky Institute Munich, Germany in 1997. From 1992 till 2004, he was working on topics like GaAs nanostructures, CMOS and embedded Flash technology development, since 2004 he is heading the RF and Analog Device team, working on device enablement for RF and power management applications. Currently he is working on the technology pathfinding and selection for next generation RF and mmWave products. Peter has authored and coauthored more than 20 publications and 20 patents.
Nicholas Comfoltey, Director of 5G product marketing at PSemi Corp (A Murata Company)
Title: Solutions for 5G mmWave from Silicon to Antenna Integrated Modules
Nicholas Comfoltey is the director of 5G product marketing at PSemi Corp (A Murata company), which is enhancing Murata’s world-class capabilities with high-performance semiconductors. Nicholas is passionate about improving the RF Front End. Driving forward communication products and technologies. Prior to taking product marketing responsibilities he led teams developing state of the art cellular front end modules, shipping Billions of units. He received an SM Electrical Engineering from MIT, B.S. degrees in Electrical Engineering and Physics from the UCSD and has 9 issued patents.
Dr. Frank Ellinger, Chair for Circuit Design and Network Theory, Technische Universität Dresden
Title: Energy Efficient RF- and Millimeter-Wave ICs and Frontends in SiGe and CMOS
Prof. Frank Ellinger graduated at the University of Ulm. From ETH Zürich he received an MBA, PhD and habilitation degree. He heads the Chair for Circuit Design and Network Theory at Technische Universität Dresden since 2006. He coordinated e.g. the BMBF cluster project FAST with more than 90 partners, the DFG Priority Program FFlexCom and the EU projects DIMENSION, ADDAPT, FLEXIBILITY. Frank Ellinger has been with the IBM/ETHZ Competence Center for Advanced Silicon Electronics hosted at IBM Research in Rüschlikon. Frank Ellinger published more than 450 scientific papers, has received several awards such as the Vodafone Innovation Award, the Alcatel Lucent Science Award and an IEEE Outstanding Young Engineer Award, and was an IEEE Distinguished Lecturer.
Dr. Peter Asbeck, Professor Emeritus, Department of Electrical and Computer Engineering, University of California, San Diego
Title: mmWwave 5G Power Amplifiers in CMOS-SOI and SiGe with High Backoff Efficiency
Peter Asbeck is Professor Emeritus in the Department of Electrical and Computer Engineering at the University of California, San Diego, and member of UCSD’s Center for Wireless Communications. His research centers on high performance transistor technologies and their application to wireless power amplifiers. He attended MIT, where he received the B.S. and Ph.D. degrees in 1969 and in 1975. From 1978 to 1991, he was with Rockwell International Science Center, where he was involved in the development of high speed devices and circuits using III-V compounds and heterojunctions. Dr. Asbeck is a member of the U.S. National Academy of Engineering, and has been a Distinguished Lecturer of the IEEE Electron Device Society, and of the Microwave Theory and Techniques Society. He received the 2003 IEEE David Sarnoff Award for his work on heterojunction bipolar transistors, and the 2012 IEEE MTT Distinguished Educator Award.
Dr. Hua Wang, Associate Professor, School of Electrical & Computer Engineering, Georgia Institute of Technology, USA
Title: High-Efficiency, Broadband, and Linear mmWave Power Amplifiers in Silicon ― Overcoming Device Limitations by Architecture/Circuit Innovations
Hua Wang is an associate professor at the School of Electrical and Computer Engineering (ECE) at Georgia Institute of Technology and the director of Georgia Tech Electronics and Micro-System (GEMS) lab. Prior to that, he worked at Intel Corporation and Skyworks Solutions on mm-Wave integrated circuits and RF front-end modules. He received his M.S. and Ph.D. degrees in electrical engineering from the California Institute of Technology, Pasadena, in 2007 and 2009, respectively. Dr. Wang’ research interests are in innovating mixed-signal, RF, and mm-Wave integrated circuits and hybrid systems for wireless communication, radar, imaging, and bioelectronics applications. Dr. Wang received the DARPA Young Faculty Award in 2018, the IEEE MTT-S Outstanding Young Engineer Award in 2017 and is an Associate Editor of the IEEE Microwave and Wireless Components Letters (MWCL), a Guest Editor of the IEEE Journal of Solid-State Circuits (JSSC).
Abdellatif Bellaouar is a Senior Fellow at Globalfoundries located in Dallas, Texas. His current work is focused on millimeter circuit design optimization on advanced node Silicon Technologies for millimeter Wave 5G and 77GHz radar applications. Abdellatif has over 70 issued/pending patents. Prior to joining Globalfoundries, Abdellatif was a fellow at Nvidia and a Distinguished Member of Technical Staff at Texas Instruments. He has over 22 years of experience in the RF, analog and mixed signal IC design and has led design teams to design several transceiver chips for GSM, WCDMA and LTE/LTE-Advanced using CMOS from 130nm, 65nm, 40nm to 28nm. He is a senior member of IEEE.
Elbert Bechthum received his B.Sc. and M.Sc. degrees in Electrical Engineering from the Eindhoven University of Technology, The Netherlands in 2006 and 2008 respectively. He received his PhD degree cum laude from the Eindhoven University of Technology in 2015 for his thesis entitled “Wide-band Mixing-DACs with high spectral purity”. He is currently working in IMEC on ultra low-power radios and Cellular IoT. His research interests include high performance data converters, low power radios and digital PA’s.
Dr. Anirban Bandyopadhyay, Director, RF Business Development, GLOBALFOUNDRIES, USA
Title: FDSOI Technology for Energy Efficient Cellular IOT Architecture enabled by FDSOI technology
Anirban Bandyopadhyay is the Director, Business Development within GLOBALFOUNDRIES, USA and is located at Hopewell Junction, New York. His work is currently focused on hardware architecture & technology evaluations and business development for different RF and mmWave applications. Prior to joining GLOBALFOUNDRIES, he was with IBM Microelectronics for 8 years where he used to manage design enablement group for wireless applications and also led RF strategic applications and marketing. During 2000-2007, Dr. Bandyopadhyay was with Intel, California where he worked on different areas like Silicon Photonics, signal integrity in RF & Mixed signal SOC’s. He did his PhD in Electrical Engineering from Tata Institute of Fundamental Research, India and Post-Doctoral research at Nortel, Canada and at Oregon State University, USA. He represents Global Foundries in different industry consortia on RF/mmWave applications and is a Distinguished Lecturer of IEEE Electron Devices Society.